diff options
| -rw-r--r-- | arch/arm/cpu/armv7/exynos/dmc_common.c | 2 | ||||
| -rw-r--r-- | arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c | 369 | ||||
| -rw-r--r-- | arch/arm/cpu/armv7/exynos/exynos5_setup.h | 21 | ||||
| -rw-r--r-- | arch/arm/cpu/armv7/exynos/lowlevel_init.c | 2 | ||||
| -rw-r--r-- | arch/arm/dts/Makefile | 3 | ||||
| -rw-r--r-- | arch/arm/dts/exynos5420-peach-pit.dts | 127 | ||||
| -rw-r--r-- | arch/arm/dts/exynos5420-smdk5420.dts | 23 | ||||
| -rw-r--r-- | arch/arm/dts/exynos5420.dtsi | 70 | ||||
| -rw-r--r-- | arch/arm/dts/exynos54xx.dtsi | 151 | ||||
| -rw-r--r-- | arch/arm/include/asm/arch-exynos/dmc.h | 3 | ||||
| -rw-r--r-- | arch/arm/include/asm/arch-exynos/power.h | 4 | ||||
| -rw-r--r-- | board/samsung/trats/trats.c | 2 | ||||
| -rw-r--r-- | board/samsung/trats2/trats2.c | 2 | ||||
| -rw-r--r-- | boards.cfg | 3 | ||||
| -rw-r--r-- | drivers/power/pmic/pmic_max77686.c | 13 | ||||
| -rw-r--r-- | drivers/spi/exynos_spi.c | 5 | ||||
| -rw-r--r-- | include/configs/arndale.h | 2 | ||||
| -rw-r--r-- | include/configs/exynos5-dt.h | 15 | ||||
| -rw-r--r-- | include/configs/exynos5250-dt.h | 13 | ||||
| -rw-r--r-- | include/configs/exynos5420.h | 52 | ||||
| -rw-r--r-- | include/configs/peach-pit.h | 25 | ||||
| -rw-r--r-- | include/configs/s5p_goni.h | 17 | ||||
| -rw-r--r-- | include/configs/smdk5420.h | 49 |
23 files changed, 717 insertions, 256 deletions
diff --git a/arch/arm/cpu/armv7/exynos/dmc_common.c b/arch/arm/cpu/armv7/exynos/dmc_common.c index cca925e..9b6ee69 100644 --- a/arch/arm/cpu/armv7/exynos/dmc_common.c +++ b/arch/arm/cpu/armv7/exynos/dmc_common.c @@ -162,7 +162,7 @@ void mem_ctrl_init(int reset) /* If there are any other memory variant, add their init call below */ if (param->mem_type == DDR_MODE_DDR3) { - ret = ddr3_mem_ctrl_init(mem, param->mem_iv_size, reset); + ret = ddr3_mem_ctrl_init(mem, reset); if (ret) { /* will hang if failed to init memory control */ while (1) diff --git a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c index 487e6f4..b86dd2d 100644 --- a/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c +++ b/arch/arm/cpu/armv7/exynos/dmc_init_ddr3.c @@ -6,6 +6,7 @@ * SPDX-License-Identifier: GPL-2.0+ */ +#include <common.h> #include <config.h> #include <asm/io.h> #include <asm/arch/clock.h> @@ -16,7 +17,11 @@ #include "exynos5_setup.h" #include "clock_init.h" -#define TIMEOUT 10000 +#define TIMEOUT_US 10000 +#define NUM_BYTE_LANES 4 +#define DEFAULT_DQS 8 +#define DEFAULT_DQS_X4 (DEFAULT_DQS << 24) || (DEFAULT_DQS << 16) \ + || (DEFAULT_DQS << 8) || (DEFAULT_DQS << 0) #ifdef CONFIG_EXYNOS5250 static void reset_phy_ctrl(void) @@ -28,8 +33,7 @@ static void reset_phy_ctrl(void) writel(DDR3PHY_CTRL_PHY_RESET, &clk->lpddr3phy_ctrl); } -int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, - int reset) +int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) { unsigned int val; struct exynos5_phy_control *phy0_ctrl, *phy1_ctrl; @@ -177,7 +181,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, writel(val, &phy1_ctrl->phy_con1); writel(CTRL_RDLVL_GATE_ENABLE, &dmc->rdlvl_config); - i = TIMEOUT; + i = TIMEOUT_US; while ((readl(&dmc->phystatus) & (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1)) != (RDLVL_COMPLETE_CHO | RDLVL_COMPLETE_CH1) && i > 0) { @@ -221,8 +225,220 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, #endif #ifdef CONFIG_EXYNOS5420 -int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, - int reset) +/** + * RAM address to use in the test. + * + * We'll use 4 words at this address and 4 at this address + 0x80 (Ares + * interleaves channels every 128 bytes). This will allow us to evaluate all of + * the chips in a 1 chip per channel (2GB) system and half the chips in a 2 + * chip per channel (4GB) system. We can't test the 2nd chip since we need to + * do tests before the 2nd chip is enabled. Looking at the 2nd chip isn't + * critical because the 1st and 2nd chip have very similar timings (they'd + * better have similar timings, since there's only a single adjustment that is + * shared by both chips). + */ +const unsigned int test_addr = CONFIG_SYS_SDRAM_BASE; + +/* Test pattern with which RAM will be tested */ +static const unsigned int test_pattern[] = { + 0x5a5a5a5a, + 0xa5a5a5a5, + 0xf0f0f0f0, + 0x0f0f0f0f, +}; + +/** + * This function is a test vector for sw read leveling, + * it compares the read data with the written data. + * + * @param ch DMC channel number + * @param byte_lane which DQS byte offset, + * possible values are 0,1,2,3 + * @return TRUE if memory was good, FALSE if not. + */ +static bool dmc_valid_window_test_vector(int ch, int byte_lane) +{ + unsigned int read_data; + unsigned int mask; + int i; + + mask = 0xFF << (8 * byte_lane); + + for (i = 0; i < ARRAY_SIZE(test_pattern); i++) { + read_data = readl(test_addr + i * 4 + ch * 0x80); + if ((read_data & mask) != (test_pattern[i] & mask)) + return false; + } + + return true; +} + +/** + * This function returns current read offset value. + * + * @param phy_ctrl pointer to the current phy controller + */ +static unsigned int dmc_get_read_offset_value(struct exynos5420_phy_control + *phy_ctrl) +{ + return readl(&phy_ctrl->phy_con4); +} + +/** + * This function performs resync, so that slave DLL is updated. + * + * @param phy_ctrl pointer to the current phy controller + */ +static void ddr_phy_set_do_resync(struct exynos5420_phy_control *phy_ctrl) +{ + setbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3); + clrbits_le32(&phy_ctrl->phy_con10, PHY_CON10_CTRL_OFFSETR3); +} + +/** + * This function sets read offset value register with 'offset'. + * + * ...we also call call ddr_phy_set_do_resync(). + * + * @param phy_ctrl pointer to the current phy controller + * @param offset offset to read DQS + */ +static void dmc_set_read_offset_value(struct exynos5420_phy_control *phy_ctrl, + unsigned int offset) +{ + writel(offset, &phy_ctrl->phy_con4); + ddr_phy_set_do_resync(phy_ctrl); +} + +/** + * Convert a 2s complement byte to a byte with a sign bit. + * + * NOTE: you shouldn't use normal math on the number returned by this function. + * As an example, -10 = 0xf6. After this function -10 = 0x8a. If you wanted + * to do math and get the average of 10 and -10 (should be 0): + * 0x8a + 0xa = 0x94 (-108) + * 0x94 / 2 = 0xca (-54) + * ...and 0xca = sign bit plus 0x4a, or -74 + * + * Also note that you lose the ability to represent -128 since there are two + * representations of 0. + * + * @param b The byte to convert in two's complement. + * @return The 7-bit value + sign bit. + */ + +unsigned char make_signed_byte(signed char b) +{ + if (b < 0) + return 0x80 | -b; + else + return b; +} + +/** + * Test various shifts starting at 'start' and going to 'end'. + * + * For each byte lane, we'll walk through shift starting at 'start' and going + * to 'end' (inclusive). When we are finally able to read the test pattern + * we'll store the value in the results array. + * + * @param phy_ctrl pointer to the current phy controller + * @param ch channel number + * @param start the start shift. -127 to 127 + * @param end the end shift. -127 to 127 + * @param results we'll store results for each byte lane. + */ + +void test_shifts(struct exynos5420_phy_control *phy_ctrl, int ch, + int start, int end, int results[NUM_BYTE_LANES]) +{ + int incr = (start < end) ? 1 : -1; + int byte_lane; + + for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) { + int shift; + + dmc_set_read_offset_value(phy_ctrl, DEFAULT_DQS_X4); + results[byte_lane] = DEFAULT_DQS; + + for (shift = start; shift != (end + incr); shift += incr) { + unsigned int byte_offsetr; + unsigned int offsetr; + + byte_offsetr = make_signed_byte(shift); + + offsetr = dmc_get_read_offset_value(phy_ctrl); + offsetr &= ~(0xFF << (8 * byte_lane)); + offsetr |= (byte_offsetr << (8 * byte_lane)); + dmc_set_read_offset_value(phy_ctrl, offsetr); + + if (dmc_valid_window_test_vector(ch, byte_lane)) { + results[byte_lane] = shift; + break; + } + } + } +} + +/** + * This function performs SW read leveling to compensate DQ-DQS skew at + * receiver it first finds the optimal read offset value on each DQS + * then applies the value to PHY. + * + * Read offset value has its min margin and max margin. If read offset + * value exceeds its min or max margin, read data will have corruption. + * To avoid this we are doing sw read leveling. + * + * SW read leveling is: + * 1> Finding offset value's left_limit and right_limit + * 2> and calculate its center value + * 3> finally programs that center value to PHY + * 4> then PHY gets its optimal offset value. + * + * @param phy_ctrl pointer to the current phy controller + * @param ch channel number + * @param coarse_lock_val The coarse lock value read from PHY_CON13. + * (0 - 0x7f) + */ +static void software_find_read_offset(struct exynos5420_phy_control *phy_ctrl, + int ch, unsigned int coarse_lock_val) +{ + unsigned int offsetr_cent; + int byte_lane; + int left_limit; + int right_limit; + int left[NUM_BYTE_LANES]; + int right[NUM_BYTE_LANES]; + int i; + + /* Fill the memory with test patterns */ + for (i = 0; i < ARRAY_SIZE(test_pattern); i++) + writel(test_pattern[i], test_addr + i * 4 + ch * 0x80); + + /* Figure out the limits we'll test with; keep -127 < limit < 127 */ + left_limit = DEFAULT_DQS - coarse_lock_val; + right_limit = DEFAULT_DQS + coarse_lock_val; + if (right_limit > 127) + right_limit = 127; + + /* Fill in the location where reads were OK from left and right */ + test_shifts(phy_ctrl, ch, left_limit, right_limit, left); + test_shifts(phy_ctrl, ch, right_limit, left_limit, right); + + /* Make a final value by taking the center between the left and right */ + offsetr_cent = 0; + for (byte_lane = 0; byte_lane < NUM_BYTE_LANES; byte_lane++) { + int temp_center; + unsigned int vmwc; + + temp_center = (left[byte_lane] + right[byte_lane]) / 2; + vmwc = make_signed_byte(temp_center); + offsetr_cent |= vmwc << (8 * byte_lane); + } + dmc_set_read_offset_value(phy_ctrl, offsetr_cent); +} + +int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset) { struct exynos5420_clock *clk = (struct exynos5420_clock *)samsung_get_base_clock(); @@ -231,7 +447,9 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, struct exynos5420_phy_control *phy0_ctrl, *phy1_ctrl; struct exynos5420_dmc *drex0, *drex1; struct exynos5420_tzasc *tzasc0, *tzasc1; + struct exynos5_power *pmu; uint32_t val, n_lock_r, n_lock_w_phy0, n_lock_w_phy1; + uint32_t lock0_info, lock1_info; int chip; int i; @@ -244,6 +462,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, tzasc0 = (struct exynos5420_tzasc *)samsung_get_base_dmc_tzasc(); tzasc1 = (struct exynos5420_tzasc *)(samsung_get_base_dmc_tzasc() + DMC_OFFSET); + pmu = (struct exynos5_power *)EXYNOS5420_POWER_BASE; /* Enable PAUSE for DREX */ setbits_le32(&clk->pause, ENABLE_BIT); @@ -394,7 +613,41 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, */ dmc_config_mrs(mem, &drex0->directcmd); dmc_config_mrs(mem, &drex1->directcmd); - } else { + } + + /* + * Get PHY_CON13 from both phys. Gate CLKM around reading since + * PHY_CON13 is glitchy when CLKM is running. We're paranoid and + * wait until we get a "fine lock", though a coarse lock is probably + * OK (we only use the coarse numbers below). We try to gate the + * clock for as short a time as possible in case SDRAM is somehow + * sensitive. sdelay(10) in the loop is arbitrary to make sure + * there is some time for PHY_CON13 to get updated. In practice + * no delay appears to be needed. + */ + val = readl(&clk->gate_bus_cdrex); + while (true) { + writel(val & ~0x1, &clk->gate_bus_cdrex); + lock0_info = readl(&phy0_ctrl->phy_con13); + writel(val, &clk->gate_bus_cdrex); + + if ((lock0_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED) + break; + + sdelay(10); + } + while (true) { + writel(val & ~0x2, &clk->gate_bus_cdrex); + lock1_info = readl(&phy1_ctrl->phy_con13); + writel(val, &clk->gate_bus_cdrex); + + if ((lock1_info & CTRL_FINE_LOCKED) == CTRL_FINE_LOCKED) + break; + + sdelay(10); + } + + if (!reset) { /* * During Suspend-Resume & S/W-Reset, as soon as PMU releases * pad retention, CKE goes high. This causes memory contents @@ -445,15 +698,13 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, val |= (RDLVL_PASS_ADJ_VAL << RDLVL_PASS_ADJ_OFFSET); writel(val, &phy1_ctrl->phy_con1); - n_lock_r = readl(&phy0_ctrl->phy_con13); - n_lock_w_phy0 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2; + n_lock_w_phy0 = (lock0_info & CTRL_LOCK_COARSE_MASK) >> 2; n_lock_r = readl(&phy0_ctrl->phy_con12); n_lock_r &= ~CTRL_DLL_ON; n_lock_r |= n_lock_w_phy0; writel(n_lock_r, &phy0_ctrl->phy_con12); - n_lock_r = readl(&phy1_ctrl->phy_con13); - n_lock_w_phy1 = (n_lock_r & CTRL_LOCK_COARSE_MASK) >> 2; + n_lock_w_phy1 = (lock1_info & CTRL_LOCK_COARSE_MASK) >> 2; n_lock_r = readl(&phy1_ctrl->phy_con12); n_lock_r &= ~CTRL_DLL_ON; n_lock_r |= n_lock_w_phy1; @@ -482,7 +733,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, writel(val, &phy1_ctrl->phy_con1); writel(CTRL_RDLVL_GATE_ENABLE, &drex0->rdlvl_config); - i = TIMEOUT; + i = TIMEOUT_US; while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) != RDLVL_COMPLETE_CHO) && (i > 0)) { /* @@ -497,7 +748,7 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, writel(CTRL_RDLVL_GATE_DISABLE, &drex0->rdlvl_config); writel(CTRL_RDLVL_GATE_ENABLE, &drex1->rdlvl_config); - i = TIMEOUT; + i = TIMEOUT_US; while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) != RDLVL_COMPLETE_CHO) && (i > 0)) { /* @@ -522,77 +773,6 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, &drex1->directcmd); } - if (mem->read_leveling_enable) { - /* Set Read DQ Calibration */ - val = (0x3 << DIRECT_CMD_BANK_SHIFT) | 0x4; - for (chip = 0; chip < mem->chips_to_configure; chip++) { - writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), - &drex0->directcmd); - writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), - &drex1->directcmd); - } - - val = readl(&phy0_ctrl->phy_con1); - val |= READ_LEVELLING_DDR3; - writel(val, &phy0_ctrl->phy_con1); - val = readl(&phy1_ctrl->phy_con1); - val |= READ_LEVELLING_DDR3; - writel(val, &phy1_ctrl->phy_con1); - - val = readl(&phy0_ctrl->phy_con2); - val |= (RDLVL_EN | RDLVL_INCR_ADJ); - writel(val, &phy0_ctrl->phy_con2); - val = readl(&phy1_ctrl->phy_con2); - val |= (RDLVL_EN | RDLVL_INCR_ADJ); - writel(val, &phy1_ctrl->phy_con2); - - setbits_le32(&drex0->rdlvl_config, - CTRL_RDLVL_DATA_ENABLE); - i = TIMEOUT; - while (((readl(&drex0->phystatus) & RDLVL_COMPLETE_CHO) - != RDLVL_COMPLETE_CHO) && (i > 0)) { - /* - * TODO(waihong): Comment on how long this take - * to timeout - */ - sdelay(100); - i--; - } - if (!i) - return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; - - clrbits_le32(&drex0->rdlvl_config, - CTRL_RDLVL_DATA_ENABLE); - setbits_le32(&drex1->rdlvl_config, - CTRL_RDLVL_DATA_ENABLE); - i = TIMEOUT; - while (((readl(&drex1->phystatus) & RDLVL_COMPLETE_CHO) - != RDLVL_COMPLETE_CHO) && (i > 0)) { - /* - * TODO(waihong): Comment on how long this take - * to timeout - */ - sdelay(100); - i--; - } - if (!i) - return SETUP_ERR_RDLV_COMPLETE_TIMEOUT; - - clrbits_le32(&drex1->rdlvl_config, - CTRL_RDLVL_DATA_ENABLE); - - val = (0x3 << DIRECT_CMD_BANK_SHIFT); - for (chip = 0; chip < mem->chips_to_configure; chip++) { - writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), - &drex0->directcmd); - writel(val | (chip << DIRECT_CMD_CHIP_SHIFT), - &drex1->directcmd); - } - - update_reset_dll(&drex0->phycontrol0, DDR_MODE_DDR3); - update_reset_dll(&drex1->phycontrol0, DDR_MODE_DDR3); - } - /* Common Settings for Leveling */ val = PHY_CON12_RESET_VAL; writel((val + n_lock_w_phy0), &phy0_ctrl->phy_con12); @@ -602,6 +782,27 @@ int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, setbits_le32(&phy1_ctrl->phy_con2, DLL_DESKEW_EN); } + /* + * Do software read leveling + * + * Do this before we turn on auto refresh since the auto refresh can + * be in conflict with the resync operation that's part of setting + * read leveling. + */ + if (!reset) { + /* restore calibrated value after resume */ + dmc_set_read_offset_value(phy0_ctrl, readl(&pmu->pmu_spare1)); + dmc_set_read_offset_value(phy1_ctrl, readl(&pmu->pmu_spare2)); + } else { + software_find_read_offset(phy0_ctrl, 0, + CTRL_LOCK_COARSE(lock0_info)); + software_find_read_offset(phy1_ctrl, 1, + CTRL_LOCK_COARSE(lock1_info)); + /* save calibrated value to restore after resume */ + writel(dmc_get_read_offset_value(phy0_ctrl), &pmu->pmu_spare1); + writel(dmc_get_read_offset_value(phy1_ctrl), &pmu->pmu_spare2); + } + /* Send PALL command */ dmc_config_prech(mem, &drex0->directcmd); dmc_config_prech(mem, &drex1->directcmd); diff --git a/arch/arm/cpu/armv7/exynos/exynos5_setup.h b/arch/arm/cpu/armv7/exynos/exynos5_setup.h index 53b0ace..3242093 100644 --- a/arch/arm/cpu/armv7/exynos/exynos5_setup.h +++ b/arch/arm/cpu/armv7/exynos/exynos5_setup.h @@ -282,8 +282,12 @@ #define PHY_CON12_VAL 0x10107F50 #define CTRL_START (1 << 6) #define CTRL_DLL_ON (1 << 5) +#define CTRL_LOCK_COARSE_OFFSET 10 +#define CTRL_LOCK_COARSE_MASK (0x7F << CTRL_LOCK_COARSE_OFFSET) +#define CTRL_LOCK_COARSE(x) (((x) & CTRL_LOCK_COARSE_MASK) >> \ + CTRL_LOCK_COARSE_OFFSET) #define CTRL_FORCE_MASK (0x7F << 8) -#define CTRL_LOCK_COARSE_MASK (0x7F << 10) +#define CTRL_FINE_LOCKED 0x7 #define CTRL_OFFSETD_RESET_VAL 0x8 #define CTRL_OFFSETD_VAL 0x7F @@ -431,10 +435,10 @@ /* * Definitions that differ with SoC's. - * Below is the part defining macros for smdk5250. - * Else part introduces macros for smdk5420. + * Below is the part defining macros for Exynos5250. + * Else part introduces macros for Exynos5420. */ -#ifndef CONFIG_SMDK5420 +#ifndef CONFIG_EXYNOS5420 /* APLL_CON1 */ #define APLL_CON1_VAL (0x00203800) @@ -890,16 +894,11 @@ enum { /* * Memory variant specific initialization code for DDR3 * - * @param mem Memory timings for this memory type. - * @param mem_iv_size Memory interleaving size is a configurable parameter - * which the DMC uses to decide how to split a memory - * chunk into smaller chunks to support concurrent - * accesses; may vary across boards. + * @param mem Memory timings for this memory type. * @param reset Reset DDR PHY during initialization. * @return 0 if ok, SETUP_ERR_... if there is a problem */ -int ddr3_mem_ctrl_init(struct mem_timings *mem, unsigned long mem_iv_size, - int reset); +int ddr3_mem_ctrl_init(struct mem_timings *mem, int reset); /* Memory variant specific initialization code for LPDDR3 */ void lpddr3_mem_ctrl_init(void); diff --git a/arch/arm/cpu/armv7/exynos/lowlevel_init.c b/arch/arm/cpu/armv7/exynos/lowlevel_init.c index dcc270f..83e1dcf 100644 --- a/arch/arm/cpu/armv7/exynos/lowlevel_init.c +++ b/arch/arm/cpu/armv7/exynos/lowlevel_init.c @@ -49,8 +49,6 @@ int do_lowlevel_init(void) arch_cpu_init(); - set_ps_hold_ctrl(); - reset_status = get_reset_status(); switch (reset_status) { diff --git a/arch/arm/dts/Makefile b/arch/arm/dts/Makefile index 61527a2..6e2e313 100644 --- a/arch/arm/dts/Makefile +++ b/arch/arm/dts/Makefile @@ -6,7 +6,8 @@ dtb-$(CONFIG_EXYNOS4) += exynos4210-origen.dtb \ dtb-$(CONFIG_EXYNOS5) += exynos5250-arndale.dtb \ exynos5250-snow.dtb \ exynos5250-smdk5250.dtb \ - exynos5420-smdk5420.dtb + exynos5420-smdk5420.dtb \ + exynos5420-peach-pit.dtb dtb-$(CONFIG_MX6) += imx6q-sabreauto.dtb dtb-$(CONFIG_TEGRA) += tegra20-harmony.dtb \ tegra20-medcom-wide.dtb \ diff --git a/arch/arm/dts/exynos5420-peach-pit.dts b/arch/arm/dts/exynos5420-peach-pit.dts new file mode 100644 index 0000000..8d148af --- /dev/null +++ b/arch/arm/dts/exynos5420-peach-pit.dts @@ -0,0 +1,127 @@ +/* + * SAMSUNG/GOOGLE Peach-Pit board device tree source + * + * Copyright (c) 2013 Samsung Electronics Co., Ltd. + * http://www.samsung.com + * + * SPDX-License-Identifier: GPL-2.0+ + */ + +/dts-v1/; +/include/ "exynos54xx.dtsi" + +/ { + model = "Samsung/Google Peach Pit board based on Exynos5420"; + + compatible = "google,pit-rev#", "google,pit", + "google,peach", "samsung,exynos5420", "samsung,exynos5"; + + config { + google,bad-wake-gpios = <&gpio 0x56 0>; /* gpx0-6 */ + hwid = "PIT TEST A-A 7848"; + lazy-init = <1>; + }; + + aliases { + serial0 = "/serial@12C30000"; + console = "/serial@12C30000"; + pmic = "/i2c@12ca0000"; + }; + + dmc { + mem-manuf = "samsung"; + mem-type = "ddr3"; + clock-frequency = <800000000>; + arm-frequency = <1700000000>; + }; + + tmu@10060000 { + samsung,min-temp = <25>; + samsung,max-temp = <125>; + samsung,start-warning = <95>; + samsung,start-tripping = <105>; + samsung,hw-tripping = <110>; + samsung,efuse-min-value = <40>; + samsung,efuse-value = <55>; + samsung,efuse-max-value = <100>; + samsung,slope = <274761730>; + samsung,dc-value = <25>; + }; + + /* MAX77802 is on i2c bus 4 */ + i2c@12ca0000 { + clock-frequency = <400000>; + power-regulator@9 { + compatible = "maxim,max77802-pmic"; + reg = <0x9>; + }; + }; + + i2c@12cd0000 { /* i2c7 */ + clock-frequency = <100000>; + soundcodec@20 { + reg = <0x20>; + compatible = "maxim,max98090-codec"; + }; + }; + + sound@3830000 { + samsung,codec-type = "max98090"; + }; + + i2c@12e10000 { /* i2c9 */ + clock-frequency = <400000>; + tpm@20 { + compatible = "infineon,slb9645-tpm"; + reg = <0x20>; + }; + }; + + spi@12d30000 { /* spi1 */ + spi-max-frequency = <50000000>; + firmware_storage_spi: flash@0 { + reg = <0>; + + /* + * A region for the kernel to store a panic event + * which the firmware will add to the log. + */ + elog-panic-event-offset = <0x01e00000 0x100000>; + + elog-shrink-size = <0x400>; + elog-full-threshold = <0xc00>; + }; + }; + + spi@12d40000 { /* spi2 */ + spi-max-frequency = <4000000>; + spi-deactivate-delay = <200>; + cros-ec@0 { + reg = <0>; + compatible = "google,cros-ec"; + spi-half-duplex; + spi-max-timeout-ms = <1100>; + spi-frame-header = <0xec>; + ec-interrupt = <&gpio 93 1>; /* GPX1_5 */ + + /* + * This describes the flash memory within the EC. Note + * that the STM32L flash erases to 0, not 0xff. + */ + #address-cells = <1>; + #size-cells = <1>; + flash@8000000 { + reg = <0x08000000 0x20000>; + erase-value = <0>; + }; + }; + }; + + xhci@12000000 { + samsung,vbus-gpio = <&gpio 0x40 0>; /* H00 */ + }; + + xhci@12400000 { + samsung,vbus-gpio = <&gpio 0x41 0>; /* H01 */ + }; +}; diff --git a/arch/arm/dts/exynos5420-smdk5420.dts b/arch/arm/dts/exynos5420-smdk5420.dts index d739763..1bc6256 100644 --- a/arch/arm/dts/exynos5420-smdk5420.dts +++ b/arch/arm/dts/exynos5420-smdk5420.dts @@ -8,7 +8,7 @@ */ /dts-v1/; -/include/ "exynos5420.dtsi" +/include/ "exynos54xx.dtsi" / { model = "SAMSUNG SMDK5420 board based on EXYNOS5420"; @@ -19,27 +19,6 @@ }; aliases { - i2c0 = "/i2c@12c60000"; - i2c1 = "/i2c@12c70000"; - i2c2 = "/i2c@12c80000"; - i2c3 = "/i2c@12c90000"; - i2c4 = "/i2c@12ca0000"; - i2c5 = "/i2c@12cb0000"; - i2c6 = "/i2c@12cc0000"; - i2c7 = "/i2c@12cd0000"; - i2c8 = "/i2c@12e00000"; - i2c9 = "/i2c@12e10000"; - i2c10 = "/i2c@12e20000"; - spi0 = "/spi@12d20000"; - spi1 = "/spi@12d30000"; - spi2 = "/spi@12d40000"; - spi3 = "/spi@131a0000"; - spi4 = "/spi@131b0000"; - mmc0 = "/mmc@12200000"; - mmc1 = "/mmc@12210000"; - mmc2 = "/mmc@12220000"; - xhci0 = "/xhci@12000000"; - xhci1 = "/xhci@12400000"; serial0 = "/serial@12C30000"; console = "/serial@12C30000"; }; diff --git a/arch/arm/dts/exynos5420.dtsi b/arch/arm/dts/exynos5420.dtsi deleted file mode 100644 index 02ead61..0000000 --- a/arch/arm/dts/exynos5420.dtsi +++ /dev/null @@ -1,70 +0,0 @@ -/* - * (C) Copyright 2013 SAMSUNG Electronics - * SAMSUNG EXYNOS5420 SoC device tree source - * - * SPDX-License-Identifier: GPL-2.0+ - */ - -/include/ "exynos5.dtsi" - -/ { - config { - machine-arch-id = <4151>; - }; - - i2c@12ca0000 { - #address-cells = <1>; - #size-cells = <0>; - compatible = "samsung,exynos5-hsi2c"; - reg = <0x12CA0000 0x100>; - interrupts = <0 60 0>; - }; - - i2c@12cb0000 { - #address-cells = <1>; - #size-cells = <0>; - compatible = "samsung,exynos5-hsi2c"; - reg = <0x12CB0000 0x100>; - interrupts = <0 61 0>; - }; - - i2c@12cc0000 { - #address-cells = <1>; - #size-cells = <0>; - compatible = "samsung,exynos5-hsi2c"; - reg = <0x12CC0000 0x100>; - interrupts = <0 62 0>; - }; - - i2c@12cd0000 { - #address-cells = <1>; - #size-cells = <0>; - compatible = "samsung,exynos5-hsi2c"; - reg = <0x12CD0000 0x100>; - interrupts = <0 63 0>; - }; - - i2c@12e00000 { - #address-cells = <1>; - #size-cells = <0>; - compatible = "samsung,exynos5-hsi2c"; - reg = <0x12E00000 0x100>; - interrupts = <0 87 0>; - }; - - i2c@12e10000 { - #address-cells = <1>; - #size-cells = <0>; - compatible = "samsung,exynos5-hsi2c"; - reg = <0x12E10000 0x100>; - interrupts = <0 88 0>; - }; - - i2c@12e20000 { - #address-cells = <1>; - #size-cells = <0>; - compatible = "samsung,exynos5-hsi2c"; - reg = <0x12E20000 0x100>; - interrupts = <0 203 0>; - }; -}; diff --git a/arch/arm/dts/exynos54xx.dtsi b/arch/arm/dts/exynos54xx.dtsi new file mode 100644 index 0000000..b9f8e0b --- /dev/null +++ b/arch/arm/dts/exynos54xx.dtsi @@ -0,0 +1,151 @@ +/* + * (C) Copyright 2013 SAMSUNG Electronics + * SAMSUNG EXYNOS5420 SoC device tree source + * + * SPDX-License-Identifier: GPL-2.0+ + */ + +/include/ "exynos5.dtsi" + +/ { + config { + machine-arch-id = <4151>; + }; + + aliases { + i2c0 = "/i2c@12c60000"; + i2c1 = "/i2c@12c70000"; + i2c2 = "/i2c@12c80000"; + i2c3 = "/i2c@12c90000"; + i2c4 = "/i2c@12ca0000"; + i2c5 = "/i2c@12cb0000"; + i2c6 = "/i2c@12cc0000"; + i2c7 = "/i2c@12cd0000"; + i2c8 = "/i2c@12e00000"; + i2c9 = "/i2c@12e10000"; + i2c10 = "/i2c@12e20000"; + spi0 = "/spi@12d20000"; + spi1 = "/spi@12d30000"; + spi2 = "/spi@12d40000"; + spi3 = "/spi@131a0000"; + spi4 = "/spi@131b0000"; + mmc0 = "/mmc@12200000"; + mmc1 = "/mmc@12210000"; + mmc2 = "/mmc@12220000"; + xhci0 = "/xhci@12000000"; + xhci1 = "/xhci@12400000"; + }; + + i2c@12ca0000 { + #address-cells = <1>; + #size-cells = <0>; + compatible = "samsung,exynos5-hsi2c"; + reg = <0x12CA0000 0x100>; + interrupts = <0 60 0>; + }; + + i2c@12cb0000 { + #address-cells = <1>; + #size-cells = <0>; + compatible = "samsung,exynos5-hsi2c"; + reg = <0x12CB0000 0x100>; + interrupts = <0 61 0>; + }; + + i2c@12cc0000 { + #address-cells = <1>; + #size-cells = <0>; + compatible = "samsung,exynos5-hsi2c"; + reg = <0x12CC0000 0x100>; + interrupts = <0 62 0>; + }; + + i2c@12cd0000 { + #address-cells = <1>; + #size-cells = <0>; + compatible = "samsung,exynos5-hsi2c"; + reg = <0x12CD0000 0x100>; + interrupts = <0 63 0>; + }; + + i2c@12e00000 { + #address-cells = <1>; + #size-cells = <0>; + compatible = "samsung,exynos5-hsi2c"; + reg = <0x12E00000 0x100>; + interrupts = <0 87 0>; + }; + + i2c@12e10000 { + #address-cells = <1>; + #size-cells = <0>; + compatible = "samsung,exynos5-hsi2c"; + reg = <0x12E10000 0x100>; + interrupts = <0 88 0>; + }; + + i2c@12e20000 { + #address-cells = <1>; + #size-cells = <0>; + compatible = "samsung,exynos5-hsi2c"; + reg = <0x12E20000 0x100>; + interrupts = <0 203 0>; + }; + + mmc@12200000 { + samsung,bus-width = <8>; + samsung,timing = <1 3 3>; + samsung,removable = <0>; + samsung,pre-init; + }; + + mmc@12210000 { + status = "disabled"; + }; + + mmc@12220000 { + samsung,bus-width = <4>; + samsung,timing = <1 2 3>; + samsung,removable = <1>; + }; + + mmc@12230000 { + status = "disabled"; + }; + + fimd@14400000 { + /* sysmmu is not used in U-Boot */ + samsung,disable-sysmmu; + }; + + dp@145b0000 { + samsung,lt-status = <0>; + + samsung,master-mode = <0>; + samsung,bist-mode = <0>; + samsung,bist-pattern = <0>; + samsung,h-sync-polarity = <0>; + samsung,v-sync-polarity = <0>; + samsung,interlaced = <0>; + samsung,color-space = <0>; + samsung,dynamic-range = <0>; + samsung,ycbcr-coeff = <0>; + samsung,color-depth = <1>; + }; + + dmc { + mem-type = "ddr3"; + }; + + xhci1: xhci@12400000 { + compatible = "samsung,exynos5250-xhci"; + reg = <0x12400000 0x10000>; + #address-cells = <1>; + #size-cells = <1>; + + phy { + compatible = "samsung,exynos5250-usb3-phy"; + reg = <0x12500000 0x100>; + }; + }; +}; diff --git a/arch/arm/include/asm/arch-exynos/dmc.h b/arch/arm/include/asm/arch-exynos/dmc.h index d78536d..ec3f9b6 100644 --- a/arch/arm/include/asm/arch-exynos/dmc.h +++ b/arch/arm/include/asm/arch-exynos/dmc.h @@ -467,6 +467,9 @@ enum mem_manuf { /* PHY_CON1 register fields */ #define PHY_CON1_RDLVL_RDDATA_ADJ_SHIFT 0 +/* PHY_CON4 rgister fields */ +#define PHY_CON10_CTRL_OFFSETR3 (1 << 24) + /* PHY_CON12 register fields */ #define PHY_CON12_CTRL_START_POINT_SHIFT 24 #define PHY_CON12_CTRL_INC_SHIFT 16 diff --git a/arch/arm/include/asm/arch-exynos/power.h b/arch/arm/include/asm/arch-exynos/power.h index a4b41ad..4f2447b 100644 --- a/arch/arm/include/asm/arch-exynos/power.h +++ b/arch/arm/include/asm/arch-exynos/power.h @@ -906,8 +906,8 @@ struct exynos5420_power { unsigned int sysip_dat3; unsigned char res11[0xe0]; unsigned int pmu_spare0; - unsigned int pmu_spare1; - unsigned int pmu_spare2; + unsigned int pmu_spare1; /* Store PHY0_CON4 for read leveling */ + unsigned int pmu_spare2; /* Store PHY1_CON4 for read leveling */ unsigned int pmu_spare3; unsigned char res12[0x4]; unsigned int cg_status0; diff --git a/board/samsung/trats/trats.c b/board/samsung/trats/trats.c index fec72d4..3dd340b 100644 --- a/board/samsung/trats/trats.c +++ b/board/samsung/trats/trats.c @@ -332,7 +332,7 @@ int exynos_power_init(void) if (!p_chrg->chrg->chrg_bat_present(p_chrg)) { puts("No battery detected\n"); - return -1; + return 0; } p_fg->fg->fg_battery_check(p_fg, p_bat); diff --git a/board/samsung/trats2/trats2.c b/board/samsung/trats2/trats2.c index e4987ce..fa26e61 100644 --- a/board/samsung/trats2/trats2.c +++ b/board/samsung/trats2/trats2.c @@ -214,7 +214,7 @@ int exynos_power_init(void) if (!p_chrg->chrg->chrg_bat_present(p_chrg)) { puts("No battery detected\n"); - return -1; + return 0; } p_fg->fg->fg_battery_check(p_fg, p_bat); @@ -289,6 +289,7 @@ Active arm armv7 exynos samsung origen Active arm armv7 exynos samsung smdk5250 smdk5250 - Chander Kashyap <k.chander@samsung.com> Active arm armv7 exynos samsung smdk5250 snow - Rajeshwari Shinde <rajeshwari.s@samsung.com> Active arm armv7 exynos samsung smdk5420 smdk5420 - Rajeshwari Shinde <rajeshwari.s@samsung.com> +Active arm armv7 exynos samsung smdk5420 peach-pit - Akshay Saraswat <akshay.s@samsung.com> Active arm armv7 exynos samsung smdkv310 smdkv310 - Chander Kashyap <k.chander@samsung.com> Active arm armv7 exynos samsung trats trats - Lukasz Majewski <l.majewski@samsung.com> Active arm armv7 exynos samsung trats2 trats2 - Piotr Wilczek <p.wilczek@samsung.com> @@ -368,7 +369,7 @@ Active arm armv7 rmobile atmark-techno armadillo-800eva Active arm armv7 rmobile kmc kzm9g kzm9g - Nobuhiro Iwamatsu <nobuhiro.iwamatsu.yj@renesas.com>:Tetsuyuki Kobayashi <koba@kmckk.co.jp> Active arm armv7 rmobile renesas koelsch koelsch - Nobuhiro Iwamatsu <nobuhiro.iwamatsu.yj@renesas.com> Active arm armv7 rmobile renesas lager lager - Nobuhiro Iwamatsu <nobuhiro.iwamatsu.yj@renesas.com> -Active arm armv7 s5pc1xx samsung goni s5p_goni - Przemyslaw Marczak <p.marczak@samsung.com> +Active arm armv7 s5pc1xx samsung goni s5p_goni - Robert Baldyga <r.baldyga@samsung.com> Active arm armv7 s5pc1xx samsung smdkc100 smdkc100 - Minkyu Kang <mk7.kang@samsung.com> Active arm armv7 socfpga altera socfpga socfpga_cyclone5 - - Active arm armv7 sunxi - sunxi Cubietruck sun7i:CUBIETRUCK,SPL,SUNXI_GMAC,RGMII - diff --git a/drivers/power/pmic/pmic_max77686.c b/drivers/power/pmic/pmic_max77686.c index d4c430e..df1fd91 100644 --- a/drivers/power/pmic/pmic_max77686.c +++ b/drivers/power/pmic/pmic_max77686.c @@ -210,6 +210,10 @@ int pmic_init(unsigned char bus) { static const char name[] = "MAX77686_PMIC"; struct pmic *p = pmic_alloc(); +#ifdef CONFIG_OF_CONTROL + const void *blob = gd->fdt_blob; + int node, parent, tmp; +#endif if (!p) { printf("%s: POWER allocation error!\n", __func__); @@ -217,9 +221,6 @@ int pmic_init(unsigned char bus) } #ifdef CONFIG_OF_CONTROL - const void *blob = gd->fdt_blob; - int node, parent; - node = fdtdec_next_compatible(blob, 0, COMPAT_MAXIM_MAX77686_PMIC); if (node < 0) { debug("PMIC: No node for PMIC Chip in device tree\n"); @@ -233,11 +234,13 @@ int pmic_init(unsigned char bus) return -1; } - p->bus = i2c_get_bus_num_fdt(parent); - if (p->bus < 0) { + /* tmp since p->bus is unsigned */ + tmp = i2c_get_bus_num_fdt(parent); + if (tmp < 0) { debug("%s: Cannot find I2C bus\n", __func__); return -1; } + p->bus = tmp; p->hw.i2c.addr = fdtdec_get_int(blob, node, "reg", 9); #else p->bus = bus; diff --git a/drivers/spi/exynos_spi.c b/drivers/spi/exynos_spi.c index 4d5def2..c92276f 100644 --- a/drivers/spi/exynos_spi.c +++ b/drivers/spi/exynos_spi.c @@ -302,7 +302,10 @@ static int spi_rx_tx(struct exynos_spi_slave *spi_slave, int todo, } } else { if (rxp || stopping) { - *rxp = temp; + if (step == 4) + *(uint32_t *)rxp = temp; + else + *rxp = temp; rxp += step; } in_bytes -= step; diff --git a/include/configs/arndale.h b/include/configs/arndale.h index 30ecd45..370db82 100644 --- a/include/configs/arndale.h +++ b/include/configs/arndale.h @@ -229,6 +229,8 @@ #define CONFIG_DEFAULT_DEVICE_TREE exynos5250-arndale +#define CONFIG_PREBOOT + /* Ethernet Controllor Driver */ #ifdef CONFIG_CMD_NET #define CONFIG_SMC911X diff --git a/include/configs/exynos5-dt.h b/include/configs/exynos5-dt.h index b830495..e36a031 100644 --- a/include/configs/exynos5-dt.h +++ b/include/configs/exynos5-dt.h @@ -144,8 +144,6 @@ /* specific .lds file */ #define CONFIG_SPL_LDSCRIPT "board/samsung/common/exynos-uboot-spl.lds" -#define CONFIG_SPL_MAX_FOOTPRINT (14 * 1024) - /* Miscellaneous configurable options */ #define CONFIG_SYS_LONGHELP /* undef to save memory */ @@ -163,8 +161,6 @@ #define CONFIG_RD_LVL -#define CONFIG_NR_DRAM_BANKS 8 -#define SDRAM_BANK_SIZE (256UL << 20UL) /* 256 MB */ #define PHYS_SDRAM_1 CONFIG_SYS_SDRAM_BASE #define PHYS_SDRAM_1_SIZE SDRAM_BANK_SIZE #define PHYS_SDRAM_2 (CONFIG_SYS_SDRAM_BASE + SDRAM_BANK_SIZE) @@ -207,7 +203,10 @@ #define CONFIG_BL1_OFFSET (CONFIG_RES_BLOCK_SIZE + CONFIG_SEC_FW_SIZE) #define CONFIG_BL2_OFFSET (CONFIG_BL1_OFFSET + CONFIG_BL1_SIZE) -#define CONFIG_ENV_OFFSET (CONFIG_BL2_OFFSET + CONFIG_BL2_SIZE) + +/* Store environment at the end of a 4 MB SPI flash */ +#define FLASH_SIZE (0x4 << 20) +#define CONFIG_ENV_OFFSET (FLASH_SIZE - CONFIG_BL2_SIZE) /* U-boot copy size from boot Media to DRAM.*/ #define BL2_START_OFFSET (CONFIG_BL2_OFFSET/512) @@ -291,4 +290,10 @@ #define CONFIG_CMD_GPIO +/* USB boot mode */ +#define CONFIG_USB_BOOTING +#define EXYNOS_COPY_USB_FNPTR_ADDR 0x02020070 +#define EXYNOS_USB_SECONDARY_BOOT 0xfeed0002 +#define EXYNOS_IRAM_SECONDARY_BASE 0x02020018 + #endif /* __CONFIG_H */ diff --git a/include/configs/exynos5250-dt.h b/include/configs/exynos5250-dt.h index 9d1d56a..74e72a5 100644 --- a/include/configs/exynos5250-dt.h +++ b/include/configs/exynos5250-dt.h @@ -20,6 +20,8 @@ #define MACH_TYPE_SMDK5250 3774 #define CONFIG_MACH_TYPE MACH_TYPE_SMDK5250 +#define CONFIG_SPL_MAX_FOOTPRINT (14 * 1024) + /* USB */ #define CONFIG_CMD_USB #define CONFIG_USB_XHCI @@ -27,12 +29,6 @@ #define CONFIG_SYS_USB_XHCI_MAX_ROOT_PORTS 2 #define CONFIG_USB_STORAGE -/* USB boot mode */ -#define CONFIG_USB_BOOTING -#define EXYNOS_COPY_USB_FNPTR_ADDR 0x02020070 -#define EXYNOS_USB_SECONDARY_BOOT 0xfeed0002 -#define EXYNOS_IRAM_SECONDARY_BASE 0x02020018 - #define CONFIG_SPL_TEXT_BASE 0x02023400 #define CONFIG_BOOTCOMMAND "mmc read 40007000 451 2000; bootm 40007000" @@ -69,4 +65,9 @@ #define LCD_YRES 1600 #define LCD_BPP LCD_COLOR16 #endif + +/* DRAM Memory Banks */ +#define CONFIG_NR_DRAM_BANKS 8 +#define SDRAM_BANK_SIZE (256UL << 20UL) /* 256 MB */ + #endif /* __CONFIG_5250_H */ diff --git a/include/configs/exynos5420.h b/include/configs/exynos5420.h new file mode 100644 index 0000000..d2a9556 --- /dev/null +++ b/include/configs/exynos5420.h @@ -0,0 +1,52 @@ +/* + * Copyright (C) 2013 Samsung Electronics + * + * Configuration settings for the SAMSUNG EXYNOS5420 SoC + * + * SPDX-License-Identifier: GPL-2.0+ + */ + +#ifndef __CONFIG_EXYNOS5420_H +#define __CONFIG_EXYNOS5420_H + +#define CONFIG_EXYNOS5420 /* which is in a Exynos5 Family */ + +#define MACH_TYPE_SMDK5420 8002 +#define CONFIG_MACH_TYPE MACH_TYPE_SMDK5420 + +#define CONFIG_VAR_SIZE_SPL + +#define CONFIG_SYS_SDRAM_BASE 0x20000000 +#define CONFIG_SYS_TEXT_BASE 0x23E00000 +#ifdef CONFIG_VAR_SIZE_SPL +#define CONFIG_SPL_TEXT_BASE 0x02024410 +#else +#define CONFIG_SPL_TEXT_BASE 0x02024400 +#endif +#define CONFIG_IRAM_TOP 0x02074000 + +#define CONFIG_SPL_MAX_FOOTPRINT (30 * 1024) + +#define CONFIG_DEVICE_TREE_LIST "exynos5420-peach-pit exynos5420-smdk5420" + +#define CONFIG_MAX_I2C_NUM 11 + +/* Enable FIT support and comparison */ +#define CONFIG_FIT +#define CONFIG_FIT_BEST_MATCH + +#define CONFIG_BOARD_REV_GPIO_COUNT 2 + +#define CONFIG_BOOTCOMMAND "mmc read 20007000 451 2000; bootm 20007000" + +/* + * Put the initial stack pointer 1KB below this to allow room for the + * SPL marker. This value is arbitrary, but gd_t is placed starting here. + */ +#define CONFIG_SYS_INIT_SP_ADDR (CONFIG_IRAM_TOP - 0x800) + +/* DRAM Memory Banks */ +#define CONFIG_NR_DRAM_BANKS 7 +#define SDRAM_BANK_SIZE (512UL << 20UL) /* 512 MB */ + +#endif /* __CONFIG_EXYNOS5420_H */ diff --git a/include/configs/peach-pit.h b/include/configs/peach-pit.h new file mode 100644 index 0000000..76b8d7a --- /dev/null +++ b/include/configs/peach-pit.h @@ -0,0 +1,25 @@ +/* + * Copyright (C) 2013 Samsung Electronics + * + * Configuration settings for the SAMSUNG/GOOGLE PEACH-PIT board. + * + * SPDX-License-Identifier: GPL-2.0+ + */ + +#ifndef __CONFIG_PEACH_PIT_H +#define __CONFIG_PEACH_PIT_H + +#include <configs/exynos5-dt.h> + +#include <configs/exynos5420.h> + +#undef CONFIG_DEFAULT_DEVICE_TREE +#define CONFIG_DEFAULT_DEVICE_TREE exynos5420-peach-pit + +/* select serial console configuration */ +#define CONFIG_SERIAL3 /* use SERIAL 3 */ + +#define CONFIG_SYS_PROMPT "Peach # " +#define CONFIG_IDENT_STRING " for Peach" + +#endif /* __CONFIG_PEACH_PIT_H */ diff --git a/include/configs/s5p_goni.h b/include/configs/s5p_goni.h index fce1716..6e795bf 100644 --- a/include/configs/s5p_goni.h +++ b/include/configs/s5p_goni.h @@ -79,10 +79,18 @@ #define CONFIG_USBDOWNLOAD_GADGET #define CONFIG_DFU_FUNCTION #define CONFIG_DFU_MMC +#define CONFIG_SYS_DFU_DATA_BUF_SIZE SZ_32M +#define DFU_DEFAULT_POLL_TIMEOUT 300 + +/* TIZEN THOR downloader support */ +#define CONFIG_CMD_THOR_DOWNLOAD +#define CONFIG_THOR_FUNCTION /* USB Samsung's IDs */ #define CONFIG_G_DNL_VENDOR_NUM 0x04E8 #define CONFIG_G_DNL_PRODUCT_NUM 0x6601 +#define CONFIG_G_DNL_THOR_VENDOR_NUM CONFIG_G_DNL_VENDOR_NUM +#define CONFIG_G_DNL_THOR_PRODUCT_NUM 0x685D #define CONFIG_G_DNL_MANUFACTURER "Samsung" /* Actual modem binary size is 16MiB. Add 2MiB for bad block handling */ @@ -220,9 +228,12 @@ #define CONFIG_SYS_MONITOR_LEN (256 << 10) /* 256 KiB */ /* FLASH and environment organization */ -#define CONFIG_ENV_IS_IN_ONENAND 1 -#define CONFIG_ENV_SIZE (256 << 10) /* 256 KiB, 0x40000 */ -#define CONFIG_ENV_ADDR (1 << 20) /* 1 MB, 0x100000 */ +#define CONFIG_MMC_DEFAULT_DEV 0 +#define CONFIG_ENV_IS_IN_MMC +#define CONFIG_SYS_MMC_ENV_DEV CONFIG_MMC_DEFAULT_DEV +#define CONFIG_ENV_SIZE 4096 +#define CONFIG_ENV_OFFSET ((32 - 4) << 10) /* 32KiB - 4KiB */ +#define CONFIG_ENV_OVERWRITE #define CONFIG_USE_ONENAND_BOARD_INIT #define CONFIG_SAMSUNG_ONENAND 1 diff --git a/include/configs/smdk5420.h b/include/configs/smdk5420.h index 58f706a..606739b 100644 --- a/include/configs/smdk5420.h +++ b/include/configs/smdk5420.h @@ -1,58 +1,27 @@ /* * Copyright (C) 2013 Samsung Electronics * - * Configuration settings for the SAMSUNG EXYNOS5420 board. + * Configuration settings for the SAMSUNG SMDK5420 board. * * SPDX-License-Identifier: GPL-2.0+ */ -#ifndef __CONFIG_5420_H -#define __CONFIG_5420_H +#ifndef __CONFIG_SMDK5420_H +#define __CONFIG_SMDK5420_H #include <configs/exynos5-dt.h> -#define CONFIG_EXYNOS5420 /* which is in a Exynos5 Family */ +#include <configs/exynos5420.h> + #define CONFIG_SMDK5420 /* which is in a SMDK5420 */ #undef CONFIG_DEFAULT_DEVICE_TREE #define CONFIG_DEFAULT_DEVICE_TREE exynos5420-smdk5420 -#define CONFIG_VAR_SIZE_SPL - -#define CONFIG_SYS_SDRAM_BASE 0x20000000 -#define CONFIG_SYS_TEXT_BASE 0x23E00000 - -#define CONFIG_BOARD_REV_GPIO_COUNT 2 - -/* MACH_TYPE_SMDK5420 macro will be removed once added to mach-types */ -#define MACH_TYPE_SMDK5420 8002 /* Temporary number */ -#define CONFIG_MACH_TYPE MACH_TYPE_SMDK5420 - /* select serial console configuration */ -#define CONFIG_SERIAL3 /* use SERIAL 3 */ - -#ifdef CONFIG_VAR_SIZE_SPL -#define CONFIG_SPL_TEXT_BASE 0x02024410 -#else -#define CONFIG_SPL_TEXT_BASE 0x02024400 -#endif - -#define CONFIG_BOOTCOMMAND "mmc read 20007000 451 2000; bootm 20007000" - -#define CONFIG_SYS_PROMPT "SMDK5420 # " -#define CONFIG_IDENT_STRING " for SMDK5420" - -#define CONFIG_IRAM_TOP 0x02074000 -/* - * Put the initial stack pointer 1KB below this to allow room for the - * SPL marker. This value is arbitrary, but gd_t is placed starting here. - */ -#define CONFIG_SYS_INIT_SP_ADDR (CONFIG_IRAM_TOP - 0x800) - -#define CONFIG_MAX_I2C_NUM 11 +#define CONFIG_SERIAL3 /* use SERIAL 3 */ -/* Enable FIT support and comparison */ -#define CONFIG_FIT -#define CONFIG_FIT_BEST_MATCH +#define CONFIG_SYS_PROMPT "SMDK5420 # " +#define CONFIG_IDENT_STRING " for SMDK5420" -#endif /* __CONFIG_5420_H */ +#endif /* __CONFIG_SMDK5420_H */ |